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| Giant Magneto Resistive Position Sensor Version 1.0 Data Sheet GMR S 4 This angle sensor is based on the brand new Giant Magneto Resistive (GMR) technology. It is outstanding for the huge tolerances it offers to the user in assembly. Injection flash 0.1 max 3.2 3.0 Features * GMR sensor on copper leadframe * Sensitive to the direction, not to the intensity of the magnetic field * Constant TC of basic resistance R and magneto resistance R Applications * Rotation sensing with large air gaps according to sketch below * Angle encoders * Contactless potentiometers Pin Configuration 1, 2 3, 4 supply voltage terminals not connected 12.3 2.3 11.7 2.1 Chip center 0.55 0.15 3 x 1.27 = 3.81 spacing 4 3 2 1 4.7 4.3 o0.15 0.3 A 0.7 0.6 Flash 0.1 max Approx. weight 0.05 g 1, 2 GMR access 3, 4 not connected GPX06981 Dimensions in mm Internal magnetization is in direction of the longest side of the housing. Type x GMR S 4 x new type Marking s Ordering Code Q62705-K5002 The GMR S 4 is an angle sensor based on sputtered metallic multilayer technology. The outstanding feature of this magnetic sensor is the fact that it is sensitive to the orientation of the magnetic field and not to its intensity as long as the field is in a range between 5 ... 15 kA/m. This means, the signal output of this sensor is independent of the sensor position relative to the magnet in lateral, axial or rotational direction in the range of several millimeters. Optimum results are achieved by using magnetic targets like permanent magnets or magnetic pole-wheels. There is no need for a biasing magnet! Due to the linear change of both, basic and field dependent part of the resistance vs. temperature, simple and efficient electronic compensation of TC (R, R) is possible. Data Sheet 1 1999-04-01 Directions of internal magnetization 1.5 0.15 Chip 0.28 0.1 0.5 0.35 0.55 0.35 0.3 0.2 A GMR S 4 Resistance Rotating Magnet N S GMR Sensor 0 Principle of operation 180 360 Angle OHS00375 Output signal vs orientation of magnet R = R 0 + 0.5 * R * (1-cos ) Maximum Ratings Parameter Operating temperature Storage temperature Supply current Thermal conductivity Magnetic field 1) 1) Symbol Value - 40 ... + 150 - 50 ... + 150 5 > 2.2 >5 < 15 Unit C C mA mW/K mW/K kA/m TA Tstg I1 GthC A GthC C Hrot larger fields may reduce the magnetoresistive effect irreversibly Data Sheet 2 1999-04-01 GMR S 4 Characteristics (TA = 25 C) Parameter Nominal supply current Basic resistance Magnetoresistive effect Hrot = 5 ... 15 kA/m Temperature coefficient of basic resistance Temperature coefficient of magnetoresistance Temperature coefficient of magnetoresistive effect Hysteresis at Hrot = 10 kA/m Application Hints The application mode of the GMR position sensor is preferably as a bridge or halfbridge circuit. In every case this type of circuit compensates for the TC of the resistance value R0. To compensate for the TC of the GMR effect R/R0, if there is the necessity, is left to the application circuit and can be done for example with a NIC circuit. When operated over a complete 360 turn, a total signal of 20 mV/V is achieved at 25 C with a halfbridge. The output signal is doubled when a fullbridge circuit is used. In the case of linear position sensing, the electrical circuit remains unchanged. Symbol Value 4 > 700 4 + 0.09 ... + 0.12 - 0.12 ... - 0.09 - 0.27 ... - 0.23 <2 Unit mA % %/K %/K %/K degrees I1N R0 R/R0 TCR0 TCR TCR/R0 Hys Data Sheet 3 1999-04-01 |
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